engleski

Amorphous silicon solar cell - computer simulation in study of Cells degradation

Properties of p-i-n based amorphous silicon solar cell were investigated using 1D computer simulation using freely available software. The model structure was typical cell superstrate configuration that consists of several layers: glass substrate, TCO (transparent conductive oxide) layer as front contact, pin structure, and Al backside contact layer. In the first step, the program was tested on well-known facts related to simple p-i-n junction regarding dependence of the solar cell parameters on device structure and material properties: layer thickness, absorption coefficient, bandgap states distribution, carrier mobility etc. Some of layer parameters used in the model were determined experimental and others were taken from literature. In the second step was investigated solar cell light induced degradation process. In the model we assumed that dominant process to solar cell degradation is creation of dangling bonds. In the discussion, the results of calculation were compared to the typical experimental results for solar cells degradation in the simple p-i-n junction. The results for tandem cell configuration were also presented.

a-Si:H; solar cell; computer simulation; degradation

nije evidentirano