Preparation of the Kondo insulators FeSi by magnetron sputtering (CROSBI ID 575574)
Prilog sa skupa u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Zhang, Jin Min ; Xie, Quan ; Borjanović, Vesna ; Liang, Ya ; Zeng, Wu Xian ; Fu, Da Peng ; Ma, Dao Jing ; Wang, Yan
engleski
Preparation of the Kondo insulators FeSi by magnetron sputtering
The Kondo insulator FeSi was prepared by DC magnetron sputtering and the effects of sputtering parameters on the formation of FeSi were investigated in detail. The formation of monosilicide FeSi was clarified using X-ray diffraction (XRD) and its microstructure was characterized by scanning electron microscopy (SEM). The results indicate that the sputtering gas pressure, the sputtering power and the Ar flux all have significantly effects on formation of FeSi and the crystalline of the film. The sputtering gas pressure has effects on sputtering yields, depositing rate and the energy of sputtering atoms, the sputtering power has effects on the kinetic energy and the diffusion ability of deposing atoms and the gas flux has the effects on the flowing state of Ar gas. The most optimal sputtering parameters for the preparation of the Kondo insulator FeSi by DC magnetron sputtering are given: 1.5 Pa for sputtering Ar pressure, 100 W for sputtering power and 20 SCCM for sputtering Ar flux.
The Kondo insulator ; Magnetron Sputtering ; Sputtering Parameter ; Crystalline
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Podaci o prilogu
1129-1132.
2010.
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objavljeno
10.4028/www.scientific.net/MSF.663-665.1129
Podaci o matičnoj publikaciji
Podaci o skupu
International Conference on Optical, Electronic and Electrical Materials, OEEM2010
poster
01.08.2010-04.08.2010
Kunming, Kina