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Nonlinear Phenomena Induced by fs Laser Pulses on Silicon Surface and their Simulation (CROSBI ID 772537)

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Lugomer, Stjepan Nonlinear Phenomena Induced by fs Laser Pulses on Silicon Surface and their Simulation // (tero(at)imi.kyushu-u.ac.jp). 2013.

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Lugomer, Stjepan

engleski

Nonlinear Phenomena Induced by fs Laser Pulses on Silicon Surface and their Simulation

S. LUGOMER: Seminar at IMI, Kyushu University, Fukuoka, June 6th, 2013. 現象数理セミナー関係者の皆様 現象数理セミナーのご案内を差し上げます。多くの方々のご 参加をお待ちしております。 会場の九州大学伊都キャンパスにお車でお越しの方は、この 案内を印刷の上ご持参ください。 ■■■ Seminar on Nonlinear Phenomena and Analysis ■■■ 第78回現象数理セミナー 日時 : 2013 年 6月6日(木)15:30-17:00 場所 : 九州大学伊都キャンパス数理学研究院/IMI3階 中セミナー室3 講演題目: Nonlinear Phenomena Induced by fs Laser Pulses on Silicon Surface and their Simulation 講演者: Stjepan Lugomer (Rudjer Boskovic Institute, Zagreb, Croatia) 講演要旨: 添付fileをご覧ください。  幹事:栄伸一郎、手老篤史、福本康秀(九大・IMI) 連絡先:手老 篤史(tero(at)imi.kyushu-u.ac.jp)  HP:http://sites.google.com/site/npaseminar2/ ■■■■■■■■■■■■■■■■■■■■■■■■■■■■■ 重複してこの案内を受け取られた際にはご容赦下さい。 Nonlinear Phenomena Induced by fs Laser Pulses on Silicon Surface and their Simulation S. Lugomer “Rudjer Boskovic” Institute, Zagreb, Croatia Interaction of ultraviolet femtosecond laser pulses with silicon and generation of surface structures has been studied at two energy densities, E1 ~ Ethr ~ 0.17 J/cm2, (near the ablation threshold) and E2 ~ 0.42 J/cm2 >> Ethr, much above the ablation threshold. In both cases the number of pulses, N, is the external control parameter that controls the formation and transformation of structures. E1 ~ Ethr: For N < 200, the «carpet-like» pattern of nano-, and micro-spikes is generated by the bubble explosion in a silicon foam-layer. The accumulation of nanobubbles due to repetition of laser pulses and their explosion cause damped membrane-like oscillation of the foam-layer. For N ≥ 200, bifurcation of surface morphology takes place: (i) In the peripheral region of the spot, the surface tension waves with ~ 180 m, have been formed. The change of their wavelength into  ~ 40 m with propagation distance indicates the Eckhaus instability caused by the phase modulation with increasing N. The simulation of the left and the right propagating waves can be based on the complex Landau-Ginzburg equation.(ii) In the central region of the spot, a rough irregular morphology appears caused by the fast spinodal decomposition and fragmentation of superheated silicon layer. E2 >> Ethr: The train of 120 ≤ N ≤ 190 pulses establishes the 2D unidirectional cnoidal-like waves as well as the Y- and X-type configurations. In the region of high laser intensity, the interaction of stable line solitary-like waves give rise to the complex network structure. The network of line-solitons was shown to be decomposed into segments with more simple configurations which can be simulated by the Kadomtsev-Petviashvili (KP-II) equation with negative dispersion as 2-soliton solutions. For the sequence of pulses 200 ≤ N < 220, the transition from stable into unstable waves takes place. The unstable wiggling cnoidal and decaying line-soliton waves were shown to be reproduced by using the KP-I equation with positive dispersion. The sequence of pulses approaching the critical value, Ncritical ( ≥ 230), destruction of unstable cnoidal and solitary waves into localized lump solitons, takes place.

femtosecond lase pulses; cnoidal waves; line soliton waves; Kadomtsev-Petviashvili equatio

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(tero(at)imi.kyushu-u.ac.jp)

2013.

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