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Model of relaxation and crystallization kinetics of amorphous Al-(Mo, W) thin films under isochronal heating

Relaxation processes and crystallization kinetics of Al-(Mo, W) amorphous thin films under isochronal conditions was examined by continuous in situ electrical resistance measurements in vacuum. For the isochronal heating, it was observed that the relaxation effects decreased with an increase of the heating rate and decreased with the content of molybdenum and tungsten in the film. The crystallization temperature decreased with an increase of aluminum content. Assuming the linear dependence of resistivity with temperature, the linear ρ(T) contribution is extracted from the relaxation effects. Adopted experimental function of ρ(T) is fitted to a modified Bloch-Gruneisen formula with excellent agreement of experimental data and fitting function. The adaptation of the JMAK model to the non-isothermal kinetics was used for calculation of crystallization kinetic parameter n and activation energy for crystallization Ec. The unified model for both processes is examined and discussed.

relaxation kinetics; amorphous alloys; thin films; isochronal heating

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