izvor podataka: crosbi
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Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al_2O_3 (CROSBI ID 77411)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Mertz, C. ; Kunzer, M. ; Šantić, Branko ; Kaufmann, U. ; Akasaki, I. ; Amano, H.
Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al_2O_3 // Materials science & engineering. B, Solid-state materials for advanced technology, 43 (1997), 1-3; 176-180-x
Podaci o odgovornosti
Mertz, C. ; Kunzer, M. ; Šantić, Branko ; Kaufmann, U. ; Akasaki, I. ; Amano, H.
engleski
Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al_2O_3
Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al_2O_3
GaN; excitons; photoluminescence
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o izdanju
43 (1-3)
1997.
176-180-x
objavljeno
0921-5107
Povezanost rada
Povezane osobe
Povezane ustanove
