Doping effects on the low-energy excitations of the charge density wave system o-TaS3 (CROSBI ID 740043)
Prilog sa skupa u časopisu | izvorni znanstveni rad
Podaci o odgovornosti
Starešinić, Damir ; Biljaković, Katica ; Lunkenheimer, Peter ; Loidl, Alois ; Lasjaunias, Jean-Claude
engleski
Doping effects on the low-energy excitations of the charge density wave system o-TaS3
We report on the effect of doping on the relaxational dynamics and the specific heat (Cp) of the charge density wave (CDW) system o-TaS3. Isoelectronic substitution of Ta atoms with 0.2%-0.5% of Nb suppresses the primary relaxation process responsible for the glass-like dielectric response of pure o-TaS3 but only slightly affects the secondary process as well as the low energy excitation (LEE) contribution to Cp. Our results show that the primary relaxation process is mainly due to long range deformations of the CDW, which are prevented by doping. The secondary process and the LEE contribution to Cp originate from local topological defects of the CDW still remaining in doped samples.
charge density wave ; heat capacity ; dielectric response ; relaxations ; doping
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Podaci o prilogu
191-192.
2005.
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objavljeno
10.1051/jp4:2005131047
Podaci o matičnoj publikaciji
Journal de Physique. IV
1155-4339
Podaci o skupu
Nepoznat skup
ostalo
29.02.1904-29.02.2096