engleski

Doping effects on the relaxational dynamics of the charge density wave system o-TaS3

We present the effects of doping on the relaxational dynamics and the specific heat (Cp) of the charge density wave (CDW) system o-TaS3. Isoelectronic substitution of Ta atoms with 0.2% of Nb suppresses the primary relaxation process responsible for the glass-like dielectric response of pure o-TaS3 [1], but affects only slightly the secondary process as well as the low energy excitation (LEE) contribution to Cp. As it is well established that doping destroys the long range CDW order, our results show that the primary relaxation process is mainly due to long range deformations of the CDW, which are prevented by doping, while the secondary process and the LEE contribution to Cp originate from local topological defects of the CDW still present in doped samples.

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