Complex dielectric response of the CDW ground state in o-TaS_3 (CROSBI ID 738920)
Prilog sa skupa u časopisu | izvorni znanstveni rad
Podaci o odgovornosti
Starešinić, Damir ; Biljaković, Katica ; Bruetting, Wolfgang ; Hosseini, Khalil ; Zaitsev-Zotov, Sergei
engleski
Complex dielectric response of the CDW ground state in o-TaS_3
We report the temperature evolution of the low-frequency (f<10 MHz) dielectric response of the CDW material orthorombic TaS_ 3 between 150 K and 10 K. There are two distinctive processes observed bellow and above 50 K that define different ground states of CDW. The first one due to the weakly pinned elastic CDW freezes at about 50 K and a second one due to the dynamics of topological defects of frozen CDW appears below. Similar change of regime is observed in linear conductivity in the same temperature range. This second process we detect also in thermally stimulated discharge, an alternative technique of low frequency dielectric measurement, which allows access to effective frequencies down to 0.1 mHz.
charge-density-wave systems; specific structure of inorganic compounds; charge carriers: generation; recombination; lifetime; and trapping; dielectric permittivity; dielectric polarization and depolarization effects
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
47-48-x.
1999.
nije evidentirano
objavljeno
Podaci o matičnoj publikaciji
Journal de Physique. IV
1155-4339
Podaci o skupu
Nepoznat skup
ostalo
29.02.1904-29.02.2096