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Structural properties of a-Si1-xCx:H by saxs and ir spectroscopy

The a-Si1-xCx :H thin films were deposited by means of DC magnetron sputtering source, using benzene vapour as a origin of carbon atoms. The specimens were analysed by SAXS (Small Angle X- ray Scattering) and IR spectroscopy, as a function of carbon concentration, up to x=0.3. The incorporation of carbon atoms in a-Si:H results in usually appearance of absorption related to Si-C and C-H bonds. The integrated absorption related to Si-H bonds remains near the same, while stretching frequency of this bonds shifts towards the higher values. This, frequency related changes are discussed as a consequence of increasing in void volume ratio and/or void volume per each Si-H oscilator. The SAXS data of pure a-Si:H indicates structural units with giro radius, RG =12, 7 A which increases with cabon content up to 20, 5 A, for x=0, 2 and decreases to 17, 3 A for x=0, 3. This structural units are atributed to the clusters of small voids with dimensions of several silicon vacancies.

FTIR spectroscopy; SAXS; amorphous silicon carbide

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