Investigation of photovoltaic and thermophotovoltaic semiconductors (CROSBI ID 480649)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
J.M.Dutta, B.Vlahović, V.Borjanović, D.Gracin, R.J.Nemanich, M.E.Ware, D.Alexon, V.Litvinenko, I.Pinaev, S.Howard
engleski
Investigation of photovoltaic and thermophotovoltaic semiconductors
Electro-optical properties critical to the performance of photovoltaic and thermophotovoltaic semiconductors have been studied to establish an adequate explanation of the observed variable behaviors of some of the selected samples. On-going studies involved are on various silicon products, such as hydrogenated a-Si with various hydrogen concentrations, amorphous hydrogenated silicon-carbide alloys, and poly-Si produced by edge-defined film-fed growth (EFG) method. Measurement techniques applied include Deep Level Transient Spectroscoopy (DLTS), conventional photoluminescence (PL) and Raman spectroscopy. Efforts are also underway to apply FEL for PL studies. Preliminary results of some of these studies will be presented.
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Podaci o prilogu
20-x.
1999.
objavljeno
Podaci o matičnoj publikaciji
American Physical Society
Podaci o skupu
The American physical society meeting
predavanje
01.01.1999-01.01.1999
Chapel Hill (NC), Sjedinjene Američke Države