engleski

Structural ordering of a-Si:H thin films by laser annealing

The amorphous hydrogenated thin films, deposited on mono crystalline and glass substrate by hot wire deposition and magnetron sputtering, were annealed by Ar-ion laser radiations. The structural properties of the deposited and annealed films were examined by Raman spectroscopy (ISA U-1000 spectrometer supplied by water-cooled photomultplier). The samples were annealed by focusing thelaser beam to a spot with an average size of 5 micro m. the laser power was increased until crystallization occured. The size of micro-crystallites was estimated from the frequency of TO phonon peak and the temperature of irradiated area was determined from the ratio of Stokes and Anti-Stokes intensities of Raman spectra. The analysis of TO-like phonon peak is used to indicate different degrees of silicon matrix ordering, depending on the deposition conditions and hydrogen concentration.

cw laser annealing; amorphous silicon; Raman spectroscopy

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