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Electrical and optical properties of Zn/(PEO)4ZnCl2/[CeO2 or CeO2-SnO2(17%)] ; ITO thin film galvanic cells

Galvanic cells Zn/(PEO)4ZnCl2/CeO2 ; ITO and Zn/(PEO)4ZnCl2/CeO2-SnO2(17%) ; ITO have been formed. CeO2 and CeO2-SnO2 thin films were prepared by the sol-gel dip-coating method onto ITO glass plate. Polymer electrolyte foil (PEO)4ZnCl2 has been placed on top of CeO2 ; ITO or CeO2-SnO2 ; ITO double thin films. Zn thin foil anodes have been contacted on top of all these layers. Charge-discharge cycles were measured with a constant current of 2 mA. The complex impedance measurementsof the polymer electrolyte has been performed in the range of 1 Hz to 1 MHz and in the temperature range from 290 to 400 K by applying Zn or Sn electrodes. UV-VIS-NIR absorption measurements of CeO2 and CeO2-SnO2 thin fim cathodes have been performed before and after 1680 cycles in galvanic cells.

Galvanic cell ; Solid state cell ; Polymer electrolyte ; Thin films ; Dip-coating method

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